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      Linear RF Power Amplifier (PA) Design Theory and Principles online course – RAHRF562

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    Showing 1-10 of 103 results
    Sanchita Sarkar, Ata Sarrafinazhad, Ahsan Ghoncheh

    Parasitic Capacitances in MOS Transistor

    • Posted by Sanchita Sarkar, Ata Sarrafinazhad, Ahsan Ghoncheh
    • Categories RF Design Theory and Principles - RAHRF201, RF Topics
    • Comments 0 comment
    April 21, 2021
    69

    MOS Transistor parasitic capacitances are formed due to the separation of mobile charges at various regions within the structure. Parasitic Capacitances are the unwanted component in the circuit which are neglected while working in low-frequency. But cannot be avoided when …

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    Sanchita Sarkar, Ata Sarrafinazhad, Ahsan Ghoncheh

    Concept of Small Signal Model of MOSFET

    • Posted by Sanchita Sarkar, Ata Sarrafinazhad, Ahsan Ghoncheh
    • Categories RF Design Theory and Principles - RAHRF201, RF Topics
    • Comments 0 comment
    April 20, 2021
    7

    In this circuit, the Vgs is the input signal applied between gate and source terminal, and we know that the change in drain current is linearly proportional to Vgs. In this model, if you consider the effect of channel and …

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    Sanchita Sarkar, Ata Sarrafinazhad, Ahsan Ghoncheh

    Brief Review of the Structure of MOS Transistors

    • Posted by Sanchita Sarkar, Ata Sarrafinazhad, Ahsan Ghoncheh
    • Categories RF Design Theory and Principles - RAHRF201, RF Topics
    • Comments 0 comment
    April 16, 2021
    23

    MOS refers to Metal-Oxide-Semiconductor, and MOSFET refers to Metal-Oxide-Semiconductor Field Effect Transistor. MOSFET has four terminals: drain, source, bulk, and gate. There are two types of MOSFET: NMOS type transistor and PMOS type transistor. The below figure shows the cross-section …

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