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    Linear RF Power Amplifier (PA) Design Theory and Principles online course – RAHRF562

    Linear RF Power Amplifier (PA) Design Theory and Principles online course – RAHRF562

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      Linear RF Power Amplifier (PA) Design Theory and Principles online course – RAHRF562

      Linear RF Power Amplifier (PA) Design Theory and Principles online course – RAHRF562

      $400.00 $300.00
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    • Page 11
    21 April

    Parasitic Capacitances in MOS Transistor

    • Posted by Sanchita Sarkar, Ata Sarrafinazhad, Ahsan Ghoncheh
    • Categories RF Design Theory and Principles - RAHRF201, RF Topics
    • Comments 0 comment

    MOS Transistor parasitic capacitances are formed due to the separation of mobile charges at various regions within the structure. Parasitic Capacitances are the unwanted component in the circuit which are neglected while working in low-frequency. But cannot be avoided when …

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    20 April

    Concept of Small Signal Model of MOSFET

    • Posted by Sanchita Sarkar, Ata Sarrafinazhad, Ahsan Ghoncheh
    • Categories RF Design Theory and Principles - RAHRF201, RF Topics
    • Comments 0 comment

    In this circuit, the Vgs is the input signal applied between gate and source terminal, and we know that the change in drain current is linearly proportional to Vgs. In this model, if you consider the effect of channel and …

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    19 April

    Small Signal Analysis of MOS Transistor

    • Posted by Sanchita Sarkar, Ata Sarrafinazhad, Ahsan Ghoncheh
    • Categories RF Design Theory and Principles - RAHRF201, RF Topics
    • Comments 0 comment

    The operation point of the transistor is called biasing. Biasing is done before performing the small-signal analysis. To bias, the transistor, positive gate voltage is applied to the transistor. In this given circuit, VS is the small signal where the …

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    16 April

    Brief Review of the Structure of MOS Transistors

    • Posted by Sanchita Sarkar, Ata Sarrafinazhad, Ahsan Ghoncheh
    • Categories RF Design Theory and Principles - RAHRF201, RF Topics
    • Comments 0 comment

    MOS refers to Metal-Oxide-Semiconductor, and MOSFET refers to Metal-Oxide-Semiconductor Field Effect Transistor. MOSFET has four terminals: drain, source, bulk, and gate. There are two types of MOSFET: NMOS type transistor and PMOS type transistor. The below figure shows the cross-section …

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    15 April

    Power Gain and Voltage Gain in dB

    • Posted by Sanchita Sarkar, Ata Sarrafinazhad, Ahsan Ghoncheh
    • Categories RF Design Theory and Principles - RAHRF201, RF Topics
    • Comments 0 comment

    We know that the unit of power is watts; however, in RF systems, we measure power in decibels. A decibel is a logarithmic unit that indicates ratio or gain. When converting the power to decibels, it is compared to a …

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    13 April

    Understanding the Need of Matching Networks

    • Posted by Sanchita Sarkar, Ata Sarrafinazhad, Ahsan Ghoncheh
    • Categories RF Design Theory and Principles - RAHRF201, RF Topics
    • Comments 0 comment

    Maximum power delivery is the main objective while designing a circuit in RF systems and the purpose of creating matching networks is to maximise the power transfer with very minimum loss.The diagram shows the antenna and Low Noise Amplifier (LNA) …

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    11 April

    Maximum Power Transfer in RF Circuits

    • Posted by Sanchita Sarkar, Ata Sarrafinazhad, Ahsan Ghoncheh
    • Categories RF Design Theory and Principles - RAHRF201, RF Topics
    • Comments 0 comment

    Maximum power is an important feature in RF systems. The main objective while designing a RF circuit is to have maximum power transfer with minimum loss to avoid wasted power. For example, while designing an antenna the aim is to …

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    09 April

    Complex Power in AC Circuits

    • Posted by Sanchita Sarkar, Ata Sarrafinazhad, Ahsan Ghoncheh
    • Categories RF Design Theory and Principles - RAHRF201, RF Topics
    • Comments 0 comment

    The combination of real and imaginary values makes up a complex number. It is represented in the form of “R+jX,” where R is the real part and jX is the imaginary part. In a two-dimensional cartesian plane, the real components …

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    07 April

    Analysis of Power and Phasor in RF systems

    • Posted by Sanchita Sarkar, Ata Sarrafinazhad, Ahsan Ghoncheh
    • Categories RF Design Theory and Principles - RAHRF201, RF Topics
    • Comments 0 comment

    The RF circuits and blocks are analyzed in terms of power quantity; hence, in RF systems, we are more concerned about the power quantity rather than the voltage and current, for example, the power gain, which is the ratio of …

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    05 April

    Understanding Instantaneous and Average Power in AC circuits

    • Posted by Sanchita Sarkar, Ata Sarrafinazhad, Ahsan Ghoncheh
    • Categories RF Design Theory and Principles - RAHRF201, RF Topics
    • Comments 0 comment

    Power in circuits Power by definition is the product of current and voltage in a circuit. Power is an essential aspect to be considered while designing radio frequency and microwave circuits. The main aim while designing a circuit is to …

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